GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ×± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm R esistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Re↓sistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < ±0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Rαesistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k)π: < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with t£he support of major achievement transformation projects in Jiangsu Province and talent projects at πall levels in Suzhou City, after 10 years of research and developmen§t, we have completed the complete process development from the independent research and developmen↕t of material growth equipment to the growth and preparation of GaN single crystal substrate, €and the dislocation density of 2-inch GaN single cryst‌al substrate has been reduced to 10⁴cm², reaching the world advanced level. In the past two♥ years, we have completed the key technology development of 4-inch and 6-inch GaN single cry stal substrates. At present, GaN single crystal substrate ¥products have been provided to more than 500 customers, basically complete↓d the occupation of the R & D market, is to enhance the production capacity to the enterp♠rise application market development, the key breakthrough direction is≤ blue-green semiconductor laser, high-power power electronic devices, high reliability ✔and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crys✔tal substrate, the key material of the third generation semiconductor. Now ±we are one of the few domestic and international units that can provide 2-inch GaN single cryst<al products in batch; the comprehensive performance index o₩f GaN products is leading in the world, and in the next" three years, we will focus on transforming our technological first-mover advantage into global mar↕ket advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor sin©gle crystal materials. Gallium Nitride is the representative of the third genera∞tion semiconductor, it is the core basic material for energy-saving lighting, laser pσrojection display, smart grid, new energy vehicles, 5G communication and other in∑dustries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is the core basic↔ material for energy-saving lighting, laser projection display, smart grid, new energy vehic'les, 5G communication and other industries, and it is expected t≈o form a trillion dollar market scale by the future...

Learn more