Gallium nitride single crystal substrates for RF electronics_Suzhou Nanowin Science and Technology Co., Ltd

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Gallium nitride single crystal substrates for RF electronics

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GaN-based RF devices are the most desirable semiconductor↕ RF electronic devices to date, with the advantages of high power, high 'efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide soluαtions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high ≈reliability.
Semi-insulated GaN, Fe doped, C doped