Radio Frequency Electronics
GaN material-based RF devices, with the advantages of high power, high efficie♦ncy, high temperature resistance, irradiation resistance, etc., is the most ideal semiconductor♦ RF electronic devices to date.
Power Electronics
The mainstream development trend of power electronics, higher voltage, higher current, higher× efficiency, smaller size, higher reliability, from a single power conversion t®o "energy router development", the need to faster, with higher efficiency to deal← with higher power energy.
New Display Field
GaN single crystal: smaller size, higher resolution, chip wavelength co∑nsistency, smaller leakage current, higher efficiency under low current drive, homogeneo us epitaxial MicroLED technology on the road to "Moore's Law"β.
Full Color Laser Display
Light-emitting diode (LED) has a series of advantages such as high lighting efficie☆ncy, rich colors, energy saving, long service life, fast response time,≈ small size, and robust light source.
High Power RF Devices
In the semiconductor laser family, mid-infrared or near-infrared lasers (830nm/1064nm) are im¥portant components, but one important member is missing& - short-wave (visible) lasers, i.e. lasers in the blue 'and green wavelengths.
High Power Electronic Power Devices
MESFET, HFET, MODFET, HBT; RF power transistors; high frequency MMIC; high voltage electronicsγ; high temperature electronics; mixed signal GaN/Si integration.
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Dai Dongyun: 15962257010
Email: daidongyun@nanowin.com.cn
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Miss Ren: 17712482910
Email: renjing@nanowin.com.cn
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