Gallium nitride single crystal substrates for RF electronics_Suzhou Nanowin Science and Technology Co., Ltd

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Gallium nitride single crystal substrates for RF electronics

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GaN-based RF devices are the most desirable semiconductor RF electronic devices to d×ate, with the advantages of high power, high efficiency, high temperature resistance and irradiatio n resistance.
HEMT devices based on GaN single crystal substrates providπe solutions for simultaneous high frequency, wide spectrum, high efσficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped