2022-09-26
Process flow of a typical GaN RF device
The process of a typical GaN RF device consists of t he following stages: epitaxial growth - device isolation - ohmic contact (making source an♥d drain) - nitride passivation - gate fabrication - field plate fabrication - substrate thinning "- substrate through-hole, etc.
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2022-09-26
New advances in GaN X-band GaN amplifiers and blocking converters
Diamond Microwave, a UK-based high performance microwave power amplifier¶ company, has recently announced a range of compact microwave GaN-based pulsed so lid state power amplifiers (SSPAs), including 200W and 400W&X band SSPAs, as well as the upcoming addition of a 1kW C-band amplifier design and a 1kW ★X-band amplifier.
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2022-09-26
【DisplayTimes】Korea's KAIST develops soft vertical micro LEDs for stimulating, ac≥tivating the brain and controlling behavior
A Korean academic team has developed a soft vertical micro LED technology that can be placed in ×the brain of animals to control their actions with light, which ✔is suitable for biomedical fields such as brain research and can also be use★d in smart phones, mobile device displays and wearable lighting products.
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2022-09-26
Gallium Nitride|U.S. Air Force Research Laboratory develops new meγthod for growing flexible gallium nitride, with significant implications♥ for RF devices
The US Air Force Research Laboratory (AFRL) has announ↔ced that it has discovered a new method of growing and transferring gallium nitride (GaλN) that lays the foundation for future fifth-generation, high-speed, flexible communications s<ystems.
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