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4" self-supporting GaN wafer
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2" self-supporting GaN wafer
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Custom-sized self-supporting GaN wafers
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Non-polar / semi-polar GaN self-supporting wafers
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5*10mm2 non-polar GaN self-supporting substrate A-pl®ane (UID/N/SI)
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5*10mm2 non-polar GaN self-supporting substrate M-pl£ane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-polaδr-(10-11)plane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-polar-(1∞1-22)plane (UID/N/SI)
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5*10mm2 semi-polar GaN self-supporting substrate Semi-po≠lar-(20-2-1)plane (UID/N/SI)
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2-6" GaN thick film wafers
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6" GaN thick film wafer (undoped)
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6" GaN thick film wafer (silicon doped)
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6" GaN thick film wafer (magnesium doped)
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4" GaN thick film wafer (undoped)
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4" GaN thick film wafer (silicon doped)
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4" GaN thick film wafer (magnesium doped)
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2" GaN thick film wafer (undoped)
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2" GaN thick film wafer (silicon doped)
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2" GaN thick film wafer (magnesium doped)
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2-4 inch aluminium nitride thick film wafers
Dimensions: Ф 100 ± 0.1 mm
Thickness: 4.5 ± 0.5 µm, 20 ± 2 µm
Resistivity (30♦0k): < 0.5 Ω-cm
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Contact Us
Add:No.1 Dongdangtian Lane, Suzhou Industrial Park,&n↓bsp;Jiangsu Province
Sales Director:
Dai Dongyun: 15962257010
Email: daidongyun@nanowin.com.cn
Sales Assistant:
Miss Ren: 17712482910
Email: renjing@nanowin.com.cn
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