GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Re←sistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25♦ μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivit♥y (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness↕：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickn✔ess：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd¥, with the support of major achievement transformation projects in Jiangsu Province and talent pr§ojects at all levels in Suzhou City, after 10 years of research and development, we have πcompleted the complete process development from the independent rese★arch and development of material growth equipment to the growth and preparati∑on of GaN single crystal substrate, and the dislocation density of 2-inch GaN πsingle crystal substrate has been reduced to 10⁴cm², reaching the world advanced level. In th'e past two years, we have completed the key technology$ development of 4-inch and 6-inch GaN single crystal substrates. At present, GaN single cr∏ystal substrate products have been provided to more than 500 customers, basically c•ompleted the occupation of the R & D market, is to enhance the ∏production capacity to the enterprise application market developφment, the key breakthrough direction is blue-green semiconductor laser, high↑-power power electronic devices, high reliability and high-λpower microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN singl®e crystal substrate, the key material of the third generation semiconductor. Now we are one of thγe few domestic and international units that can provide 2-inch GaN single crysta§l products in batch; the comprehensive performance index of GaN products is• leading in the world, and in the next three years, we will focus on transf♥orming our technological first-mover advantage into global market a÷dvantage.

Ltd. was established in 2007, focusing on the growth of ★high quality GaN semiconductor single crystal materials. G♦allium Nitride is the representative of the third generation semiconductor, it is the coσre basic material for energy-saving lighting, laser βprojection display, smart grid, new energy vehicles, 5G communicatiαon and other industries, and is expected to form a trillion dollar market in the future.✔

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third genera tion semiconductor, it is the core basic material for energy-saving lighting, laser projection disp®lay, smart grid, new energy vehicles, 5G communication and other industries, and it αis expected to form a trillion dollar market scale by the future...

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