Gallium nitride single crystal in new display applications: microLED technology
- Categories:Application areas
- Time of issue:2022-09-26 10:49:58
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Information
- GaN single crystal: smaller size, higher resolution, chip wavelength≤ uniformity, smaller leakage current, higher efficiency under low current drive, homogeneous epitaxial MicroLED technology on the ro÷ad to "Moore's Law".
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WLD=472.5nm,std=0.9nm |
WLD=472.5nm,std=0.9nm |
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Wavelength uniformity of homogeneous epitaxial chips☆ on GaN single crystal substrates helps to solve the massiveα binning problem and the giant transfer problem. |
Chips with homogeneous epitaxy on GaN single crystal substrates exhibit better luminescence uniformity. |
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| Smaller leakage currents | Higher efficiency with low current drive |
GaN single crystal in new display applications: laser project¶ion displays
- GaN single crystal: GaN single crystal substrate is th¶e only substrate technology for the laser display technology route.∏
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VR眼鏡 |
手機(jī)投影(yǐng) |
汽車(chē)顯示 |
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| Laser displays | Laser Cinema | Projection |
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