Born in October 1979, he received his B.S. and Ph.D. degrees from$ Wuhan University in 2001 and 2006 (jointly trained with the® Institute of Semiconductors, Chinese Academy of Sciences)>, and has been engaged in the preparation and industrial developαment of GaN single crystal substrates since then. For GaN growth equipment, Dr. Wan↓g Jianfeng innovatively introduced an in-situ optical monitoring system  to achieve real-time monitoring of growth rate and stress, which greatly promoted G★aN material development; since the past 5 years, he has deeply s•tudied the HVPE growth mechanism and defect evolution mechanism of GaN, a©nd used intermediate layer methods such as periodi c masks and GaN nanopillar arrays to obtain crack-free, high-quality GaN materials εwith performance up to that of similar methods publicly reported. The performa nce reached the best value (dislocation density <10⁵cm², room temperature electron mobility 110×0cm²/V-s) publicly reported by similar methods so far; using dopi¶ng technology, the development of 2-inch non-doped, N-type doped and semi-insulπation compensated doped GaN single crystal substrates was achieved. Since the last 3 yearφs, the preliminary preparation of 4-inch GaN single-crystal substrateγ has been realized. As the project leader and core personnel to particip≠ate in the Ministry of Science and Technology 863 proje£cts, international cooperation projects, Natural Science Foundation projects, the Chinese Acade±my of Sciences STS projects, more than 10, declared more than 20 related core patents, in ≠ICNS, APWS and other important international conferences to make invited reports 5↔ times. The project applicant has won the China Industry-University-Research Promotional ₽Innovation Achievement Award, the Lu Jiaxi Young Talent A←ward of Chinese Academy of Sciences, and the Suzhou Model Worker Award.±