Gallium nitride single crystal in new display applications: microLED technol∏ogy
- Categories:Application areas
- Time of issue:2022-09-26 10:49:58
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Information
- GaN single crystal: smaller size, higher resolution, chip wavelen§gth uniformity, smaller leakage current, higher efficiency under low current drive, homogeneous epi₹taxial MicroLED technology on the road to "Moore's §Law".
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WLD=472.5nm,std=0.9nm |
WLD=472.5nm,std=0.9nm |
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Wavelength uniformity of homogeneous epitaxial chips on GaN single crystal substrates helps to s•olve the massive binning problem and the giant transfer prλoblem. |
Chips with homogeneous epitaxy on GaN single crystal substrates exhi$bit better luminescence uniformity. |
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| Smaller leakage currents | Higher efficiency with low current drive |
GaN single crystal in new display applications: laser projection displays
- GaN single crystal: GaN single crystal substrate is the only substrate technology for the laser di"splay technology route.
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VR眼鏡 |
手機(jī)投影(yǐng) |
汽車(chē)顯示 |
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| Laser displays | Laser Cinema | Projection |
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