Development History
With the support of Jiangsu Provincial Major Achievement Transformatσion Project (2007), National Natural Science Foundation of China (NSFC), 863 projects αand key R&D programs of Ministry of Science and Technology, industrialization demonstration projects of Development a•nd Reform Commission, as well as national and provincial and municipal₹ leading talent projects, relying on the research pl★atform of Suzhou Institute of Nanotechnology, Chinese Academy of Scεiences, Suzhou Navi has continued to plow deep in the growth and industrialization technology πof GaN single crystal materials and achieved a series of innovative breakthroughs. At present, weε can provide standard GaN single crystal substrates from 2 to 4 inches and customize single &crystal substrates of specific size and specification.
We are committed to the research and development of GaN single crystal material growth technolog↔y and equipment, to develop new methods and breakthroughs, to be the global leader in GaN single crystal technology, to be the best supplier of GaN single crystal substrate, and∏ to grow into a Chinese enterprise with outstanding contribution t♥o the global new generation semiconductor technology.
5×5mm²
Ø 2 inch dislocation density 10⁶cm-².
Ø 2 inch volume production pilot test, dislocationλ density 10⁵ cm-².
Ø 2 inch achieved in mass production, Ø 4 inch prototype. R&D horizon&tal dislocation density 10⁴ cm-².
Ø 4 inch mass production technology, Ø 6 inch key technology. Development of horizontal dislocation density 10³cm-².∞
Ø 2 inch mass production, Ø 4 inch low volume supply, Ø 7 inch prototype development. Dislocαation density: 10³cm-² at R&D level, 10⁵cm-² at volume production level.
Ø 2 inch mass production, Ø 4 inch mass production c apability, Ø 6 inch mass supply, Ø 8 inch mass production technolog✘y Dislocation density: 10²cm-² at R&D level, 10⁴cm-² ♥at volume production level.
Ø 2~8 inch mass production technology Comprehensive support: visible lasers, advanφced micron LEDs, broad spectrum RF devices, high efficiency power electr∑onics, high reliability power devices, very low dislocation density electrical performan♦ce leadership.
Contact Us
Add：No.1 Dongdangtian Lane, Suzhou&αnbsp;Industrial Park, Jiangsu Provin★ce
Sales Director:
Dai Dongyun: 15962257010
Email: daidongyun@nanowin.com.cn
Sales Assistant:
Miss Ren: 17712482910
Email: renjing@nanowin.com.cn
Online Message
159-6225-7010 
Online Inquiry 