Process flow of a typical GaN RF device
2022-09-26
2014
- Categories:History of development
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- Time of issue:2022-09-26
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(Summary description)Ø 2 inch volume production pilot test, dislocation density 10⁵ cm-².
2014
(Summary description)Ø 2 inch volume production pilot test, dislocation d✔ensity 10⁵ cm-².
- Categories:History of development
- Author:
- Origin:
- Time of issue:2022-09-26
- Views:0
Information
Conducted research and development of 4-inch GaN single crystal substrates; supported ♥by the 863 project of the Ministry of Science and Technology of the People's Republic of Chσina on the preparation of large size GaN single crys§tal substrates and homogeneous epitaxy
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