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2022-09-26
2018
- Categories:History of development
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- Time of issue:2022-09-26
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(Summary description)Ø 4 inch mass production technology, Ø 6 inch key technology.
Development of horizontal dislocation density 10³cm-².
2018
(Summary description)Ø 4 inch mass production technology, Ø 6 inch key technology.
Development of horizontal dislocation density 10³cm-²'.
- Categories:History of development
- Author:
- Origin:
- Time of issue:2022-09-26
- Views:0
Information
The dislocation density of 2-inch GaN single-crystal substrates has gained internation™al recognition; 4-inch GaN single-crystal substrates have been completed; the research and development of 6-inch GaN single-crystal substrat•es has been carried out
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