Process flow of a typical GaN RF device
2022-09-26
2008
- Categories:History of development
- Author:
- Origin:
- Time of issue:2022-09-26
- Views:0
(Summary description)5×5mm²
2008
(Summary description)5×5mm²
- Categories:History of development
- Author:
- Origin:
- Time of issue:2022-09-26
- Views:0
Information
Received support from the National Development and Reform Comm"ission for the demonstration project of industrialization← of substrate materials (GaN wafers) for ultra-high brightness energyα-saving lighting and blue-green light lasers
Scan the QR code to read on your phone
Previous:
None
Next:
2012
Previous:
None
Next:
2012
Related News
Contact Us
Add：No.1 Dongdangtian Lane, Suzhou Industrial&nbs p;Park, Jiangsu Province
Sales Director:
Dai Dongyun: 15962257010
Email: daidongyun@nanowin.com.cn
Sales Assistant:
Miss Ren: 17712482910
Email: renjing@nanowin.com.cn
Online Message
客戶留言
Description:
159-6225-7010 
Online Inquiry 