GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resis∑tivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹≈Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ↔± 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thicλkness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Th♣ickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm ±Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with¥ the support of major achievement transformation projectαs in Jiangsu Province and talent projects at all levels in Suzhou City, after§ 10 years of research and development, we have completed the comp>lete process development from the independent researc♠h and development of material growth equipment to the growt¥h and preparation of GaN single crystal substrate, and the dislo↓cation density of 2-inch GaN single crystal substra"te has been reduced to 10⁴cm², reaching the world a‌dvanced level. In the past two years, we have comp"leted the key technology development of 4-inch and 6-inch GaN single crystal substrates. Atλ present, GaN single crystal substrate products have been provided to more than 500 custom±ers, basically completed the occupation of the R & D market, is to en≤hance the production capacity to the enterprise appli↔cation market development, the key breakthrough direction is blue-green semi♥conductor laser, high-power power electronic devices, hi→gh reliability and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of Ga★N single crystal substrate, the key material of the third generation s emiconductor. Now we are one of the few domestic and inter national units that can provide 2-inch GaN single crystal products in batch; the com¥prehensive performance index of GaN products is leadiλng in the world, and in the next three years, we will focus on transforming our technological firs©t-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor single cr₩ystal materials. Gallium Nitride is the representative of the third ge→neration semiconductor, it is the core basic material for energy-saving lighting, lαaser projection display, smart grid, new energy vehicles, 5G communicaλtion and other industries, and is expected to form a trillion dollar market αin the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconduγctor, it is the core basic material for energy-saving lighting, laser projection d≠isplay, smart grid, new energy vehicles, 5G communication and other in$dustries, and it is expected to form a trillion dollar market scale by the future...

Learn more