GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k)∏: < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistiv∑ity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Th≠ickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0€.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μαm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thick♠ness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support o±f major achievement transformation projects in Jiangsu P→rovince and talent projects at all levels in Suzhou City, after 10 y∞ears of research and development, we have completed the complete pr÷ocess development from the independent research and development of material growth equipment to the growth and preparation of ★GaN single crystal substrate, and the dislocation density of 2-inδch GaN single crystal substrate has been reduced to 10⁴cm², ×reaching the world advanced level. In the past two years, we have completed t∑he key technology development of 4-inch and 6-inch GaN single crystal substrates. At present, GaN∏ single crystal substrate products have been provided to more than 500 customers, basically co↕mpleted the occupation of the R & D market, is to enhance the production capacity to the enterp×rise application market development, the key breakthrough direction is∑ blue-green semiconductor laser, high-power power electronic devicπes, high reliability and high-power microwave devices and other major areas.&nb↓sp;

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN singleπ crystal substrate, the key material of the third generation semiconductor. Now €we are one of the few domestic and international units that can p♥rovide 2-inch GaN single crystal products in batch; the comprehensive per★formance index of GaN products is leading in the world, and i n the next three years, we will focus on transforming our• technological first-mover advantage into global market advantag↔e.

Ltd. was established in 2007, focusing on the growth↓ of high quality GaN semiconductor single crystal materials. Gallium ♣Nitride is the representative of the third generation semiconductor, it ↓is the core basic material for energy-saving lighting, laser projection display, smart grid•, new energy vehicles, 5G communication and other industries, and is ex↕pected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductφor, it is the core basic material for energy-saving lighting, l®aser projection display, smart grid, new energy vehicles, 5G communication and other industriesφ, and it is expected to form a trillion dollar market scale by the future...

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