GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity≈ (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k):₩ >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resi♥stivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k©): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thic↓kness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25δ μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., ±Ltd, with the support of major achievement transformation projects in Jiangsu Provinφce and talent projects at all levels in Suzhou City, after 10 years of researc÷h and development, we have completed the complete process development from the indep endent research and development of material growth equipment to the growth and preparat→ion of GaN single crystal substrate, and the dislocation density of 2-inch GaN si&ngle crystal substrate has been reduced to 10⁴cm², reaching t←he world advanced level. In the past two years, we have completed the key technology development o•f 4-inch and 6-inch GaN single crystal substrates. At present, GaN single crys↑tal substrate products have been provided to more than 500 customers, basical"ly completed the occupation of the R & D market, is to enhance the producti≠on capacity to the enterprise application market development, t÷he key breakthrough direction is blue-green semiconductor laser, high-power power ele>ctronic devices, high reliability and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrializatio×n of GaN single crystal substrate, the key material of the third generation semiconductor. Now we↓ are one of the few domestic and international units that can provid≠e 2-inch GaN single crystal products in batch; the comprehensive performance ind≈ex of GaN products is leading in the world, and in the next three years, we will focus on transfor≤ming our technological first-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor single cry↔stal materials. Gallium Nitride is the representative of the third generat×ion semiconductor, it is the core basic material fo₽r energy-saving lighting, laser projection display, smart grid, new energ✔y vehicles, 5G communication and other industries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third gene¥ration semiconductor, it is the core basic material for energy-saving lighting, las∏er projection display, smart grid, new energy vehicles,γ 5G communication and other industries, and it is expec☆ted to form a trillion dollar market scale by the future...

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