GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650γ ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm< Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k):♥ < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness"：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：‍350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support ₩of major achievement transformation projects in Jiangsu Province and tale∞nt projects at all levels in Suzhou City, after 10 years of research and develop±ment, we have completed the complete process development from the independent research and development of material growth equipment to t÷he growth and preparation of GaN single crystal substrate, and the dislocation den₩sity of 2-inch GaN single crystal substrate has been reduc™ed to 10⁴cm², reaching the world advanced level. In the p™ast two years, we have completed the key technology development of 4-inch and 6-inch GaN sin♦gle crystal substrates. At present, GaN single crystal substrate products have been provided to mo®re than 500 customers, basically completed the occup✔ation of the R & D market, is to enhance the producti♣on capacity to the enterprise application market develo<pment, the key breakthrough direction is blue-green semiconductor laser, ©high-power power electronic devices, high reliability and high-power microwave devices and oth er major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization 'of GaN single crystal substrate, the key material of the th☆ird generation semiconductor. Now we are one of the few domestic ₹and international units that can provide 2-inch GaN single crystal products in batch; th"e comprehensive performance index of GaN products is leading in the world, <and in the next three years, we will focus on transforming our technological first-mo₩ver advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semicondu↓ctor single crystal materials. Gallium Nitride is the repres©entative of the third generation semiconductor, it is the core basic ma♣terial for energy-saving lighting, laser projection display, smart grid, new δenergy vehicles, 5G communication and other industries, and is expec♥ted to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third g≥eneration semiconductor, it is the core basic material for energy-saving lighting, laser pro±jection display, smart grid, new energy vehicles, 5G communication and other i<ndustries, and it is expected to form a trillion dollar market scaleσ by the future...

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