GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300βk): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(‌300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm ∑Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm ¥Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness₩：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：35♣0 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science an‍d Technology Co., Ltd, with the support of major achievement& transformation projects in Jiangsu Province and talent projects at all ®levels in Suzhou City, after 10 years of research and development, we have completed th←e complete process development from the independent research and devel★opment of material growth equipment to the growth and ±preparation of GaN single crystal substrate, and the dislocation density of 2-inch GaN single crys tal substrate has been reduced to 10⁴cm², reaching the world advanced level. In the past tw o years, we have completed the key technology development of €4-inch and 6-inch GaN single crystal substrates. At <present, GaN single crystal substrate products have been provided to more than 500 customers,✘ basically completed the occupation of the R & D market,← is to enhance the production capacity to the enterprise application market developmen♥t, the key breakthrough direction is blue-green semiconductor laser, high-power power electrσonic devices, high reliability and high-power microwave devi♠ces and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single c‍rystal substrate, the key material of the third gene£ration semiconductor. Now we are one of the few domestic and internation✘al units that can provide 2-inch GaN single crystal products in batch; the comprehensive perform<ance index of GaN products is leading in the world, and in theδ next three years, we will focus on transforming our technologi$cal first-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconduc tor single crystal materials. Gallium Nitride is the representative of the third generati"on semiconductor, it is the core basic material for energy-saving lighting, laser proj¶ection display, smart grid, new energy vehicles, 5G commun±ication and other industries, and is expected to form a trillion dol¶lar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is the core basic m←aterial for energy-saving lighting, laser projection dis♠play, smart grid, new energy vehicles, 5G communication and oth÷er industries, and it is expected to form a trillion dollar marke↓t scale by the future...

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