GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thicknes∑s：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): > 1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω"*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k)ε: < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±5♥0μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resiπstivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltεd, with the support of major achievement transformation projects in Jiangsu Provincβe and talent projects at all levels in Suzhou City, after 10 years of ×research and development, we have completed the complete £process development from the independent research and developβment of material growth equipment to the growth and preparation of GaN single crystal substrβate, and the dislocation density of 2-inch GaN single crystal substrate has been red↕uced to 10⁴cm², reaching the world advanced level. In the past two years, we have completed theλ key technology development of 4-inch and 6-inch GaN single crystal substrates. At pres≠ent, GaN single crystal substrate products have been provided to more than 500 customers, basicaλlly completed the occupation of the R & D market, is to enhance the pr♥oduction capacity to the enterprise application market development, the key br∏eakthrough direction is blue-green semiconductor laser,• high-power power electronic devices, high reliability and high-power microwave d÷evices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal substrate, th‌e key material of the third generation semiconductor. Now we are one o↔f the few domestic and international units that can provide 2-inch GaN sin♠gle crystal products in batch; the comprehensive perform£ance index of GaN products is leading in the world, and in the next three years, we will focus on transforming our technological first-mover ad♦vantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of ♥high quality GaN semiconductor single crystal materials. Gallium Nitride is the representative o✘f the third generation semiconductor, it is the core basic material for energγy-saving lighting, laser projection display, smart gγrid, new energy vehicles, 5G communication and other industrie♥s, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third geneδration semiconductor, it is the core basic material for energy-saving lightinλg, laser projection display, smart grid, new energy vehicles, 5G communication and other industries♥, and it is expected to form a trillion dollar market scale by the futur§e...

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