GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 ‍Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resisti£vity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (3$00k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistiv™ity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity™ (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the sπupport of major achievement transformation projects in Jiangsu• Province and talent projects at all levels in Suzhou City, after 10 years of reseaλrch and development, we have completed the complete procλess development from the independent research and development of material growth equipment to th≥e growth and preparation of GaN single crystal substrate, and the dislocation ™density of 2-inch GaN single crystal substrate has been reduced to♠ 10⁴cm², reaching the world advanced level. In the past two years, we hav÷e completed the key technology development of 4-inch andπ 6-inch GaN single crystal substrates. At present, GaN sing>le crystal substrate products have been provided to more than 500 cust∞omers, basically completed the occupation of the R & D market, i's to enhance the production capacity to the enterprise application market development, the ≠key breakthrough direction is blue-green semiconductor laser, high-power power electronic de↕vices, high reliability and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal su↓bstrate, the key material of the third generation semiconδductor. Now we are one of the few domestic and international units that can provide 2-inch GaN single crystal products in batch; the comprehensive performa÷nce index of GaN products is leading in the world, and in the next three years, we will focus onσ transforming our technological first-mover advantage ↕into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconduc§tor single crystal materials. Gallium Nitride is the representative of the third gen∏eration semiconductor, it is the core basic material for energy-saving lighting, laser pr ojection display, smart grid, new energy vehicles,× 5G communication and other industries, and is expected to form a trillion dollar market in the fu↑ture.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semic onductor, it is the core basic material for energy-saving li$ghting, laser projection display, smart grid, new energy vehicles, 5G communication and other≥ industries, and it is expected to form a trillion dollar market scale↕ by the future...

Learn more