GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickneβss：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1≈×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k)≥: < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 εμm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm₽

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ±> 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support of∏ major achievement transformation projects in Jiangsu Province and talent projects at all levels in Suzhou City, after 10 years of research and development, we have comple∏ted the complete process development from the independent research and development of materi÷al growth equipment to the growth and preparation of GaN •single crystal substrate, and the dislocation density of 2-inch GaN single crystal substrate ha‌s been reduced to 10⁴cm², reaching the world advanced level. In the past two ♥years, we have completed the key technology development of 4-inch and 6-inch $GaN single crystal substrates. At present, GaN single crystal substrate products have been provid≥ed to more than 500 customers, basically completed the occupation of the≤ R & D market, is to enhance the production capacity to the enterprise application mar₹ket development, the key breakthrough direction is blue-green semiαconductor laser, high-power power electronic devices, high reliab←ility and high-power microwave devices and other major areas.&nb↔sp;

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal ✔substrate, the key material of the third generation semiconductor. Now we are one of the few dome©stic and international units that can provide 2-inch GaN single c★rystal products in batch; the comprehensive performance i↓ndex of GaN products is leading in the world, and in the ne↔xt three years, we will focus on transforming our technological first-mover advantage into glo bal market advantage.

Ltd. was established in 2007, focusing on the growth™ of high quality GaN semiconductor single crystal materials. Gallium N≥itride is the representative of the third generation semiconduct♦or, it is the core basic material for energy-saving lig♠hting, laser projection display, smart grid, new energy vehicles, 5G communication and other indus₽tries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is the core ba sic material for energy-saving lighting, laser projection display, smart grid, new energy ve♠hicles, 5G communication and other industries, and it is ex✔pected to form a trillion dollar market scale by the future...

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