GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Res•istivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μ₽m Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k):γ < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resist≠ivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < '0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support of major achievement transformation projects in Jiangsu Province and talent pr←ojects at all levels in Suzhou City, after 10 years of research and πdevelopment, we have completed the complete process development from the♦ independent research and development of material gr•owth equipment to the growth and preparation of GaN singl£e crystal substrate, and the dislocation density of 2-inch GaN single crystal substrate has been re±duced to 10⁴cm², reaching the world advanced level. In the past two years, we have co↑mpleted the key technology development of 4-inch and 6-inch GaN single crystal substrates. At pres ent, GaN single crystal substrate products have been provided to more than 500 customers, bas↔ically completed the occupation of the R & D market, is to enαhance the production capacity to the enterprise appl↑ication market development, the key breakthrough directεion is blue-green semiconductor laser, high-power pow♣er electronic devices, high reliability and high-power m icrowave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrializati±on of GaN single crystal substrate, the key material of t∏he third generation semiconductor. Now we are one of the few do£mestic and international units that can provide 2-inch GaN single crystal products in batch; the comprehensive performance index of GaN products is leading in the≠ world, and in the next three years, we will focus on transforming€ our technological first-mover advantage into global market advantag↕e.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor sing le crystal materials. Gallium Nitride is the represent←ative of the third generation semiconductor, it is the core basic mat☆erial for energy-saving lighting, laser projection display, smart grid, new ener§gy vehicles, 5G communication and other industries, and is e♠xpected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generatioβn semiconductor, it is the core basic material for energy-saving γlighting, laser projection display, smart grid, new en₩ergy vehicles, 5G communication and other industries, an✘d it is expected to form a trillion dollar market scale ♣by the future...

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