1

GaN Single Crystal Substrate For High Power Devices•

Products Center

4" self-supporting GaN wafers (non-doped)
Specification: GaN-FS-C-U-C100 Size:Ф 100 ± 0.1 mm ™Thickness:650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
4-inch self-supporting GaN wafers (iron doped)
Specifications:GaN-FS-C-SI-C100 Size:Ф 100 ±1 mm Thickness:420↕ ±50μm Resistivity(300k): >1×10⁹Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
2" self-supporting GaN wafers (non-doped)
Specifications: GaN-FS-C-U-C50 Size:Ф 50.8 ± 1 mm Thickness:350 ± 25 μm Resistivity (3÷00k): < 0.5 Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
4" self-supporting GaN wafers (non-doped)
Specification: GaN-FS-C-U-C100 Size:Ф 100 ± 0.1 mm Thickness:650 ± ÷50 μm Resistivity (300k): < 0.5 Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
4-inch self-supporting GaN wafers (iron doped)
Specifications:GaN-FS-C-SI-C100 Size:Ф 100 ±1 mm Thickness':420 ±50μm Resistivity(300k): >1×10⁹Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
2" self-supporting GaN wafers (non-doped)
Specifications: GaN-FS-C-U-C50 Size:Ф 50.8 ± 1 mm Thickness:350♣ ± 25 μm Resistivity (300k): < 0.5 Ω*cm
More 白(bái)箭頭 黑(hēi)箭頭
imgboxbg

Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd,£ with the support of major achievement transformation projec✔ts in Jiangsu Province and talent projects at all levels inδ Suzhou City, after 10 years of research and developme←nt, we have completed the complete process development from the &independent research and development of material growth equipment to the growth and prepaλration of GaN single crystal substrate, and the dislocation density of 2-inch GaN& single crystal substrate has been reduced to 10⁴cm², reaching the world• advanced level. In the past two years, we have completed the key technology development of 4-inch ×and 6-inch GaN single crystal substrates. At present, GaN single crystal subs←trate products have been provided to more than 500 customers, basically c©ompleted the occupation of the R & D market, is to enhance the production capacity to★ the enterprise application market development, the key breakth€rough direction is blue-green semiconductor laser, >high-power power electronic devices, high reliability and hig±h-power microwave devices and other major areas. 

Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crys tal substrate, the key material of the third generation semicλonductor. Now we are one of the few domestic and international units that ‍can provide 2-inch GaN single crystal products in b€atch; the comprehensive performance index of GaN prod$ucts is leading in the world, and in the next three years‌, we will focus on transforming our technological first-mover advantage into global mark‌et advantage.


Ltd. was established in 2007, focusing on the growth of h'igh quality GaN semiconductor single crystal materials. Gallium Nitride is the representative of t☆he third generation semiconductor, it is the core basic material for energy-saving lighting, lase>r projection display, smart grid, new energy vehicles, 5G communication and other industrie₩s, and is expected to form a trillion dollar market in the future.

2007Year
Established
500+
Clients Served
60+
Core Patents
50+
Invitation to Report
10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation se₩miconductor, it is the core basic material for energy-saving lighting, laser projection →display, smart grid, new energy vehicles, 5G communication and other industries,≤ and it is expected to form a trillion dollar marke₩t scale by the future...

1

Radio Frequency Electronics

1

Power Electronics

1

New display field

News Center

Contact Us

Add:No.1 Dongdangtian Lane, Suzhou Industrial Park, Jiangsu&nb¶sp;Province

Sales Director:

Dai Dongyun: 15962257010

Email: daidongyun@nanowin.com.cn

Sales Assistant:

Miss Ren: 17712482910

Email: renjing@nanowin.com.cn

 

Online Message

Username used for comment:
客戶留言
Description:
驗證碼

Copyright ©  2022 Suzhou Nanowin Science and Technology Co., Ltd   京ICP證000000号
 

Naowin