GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k↑): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50σμm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thicδkness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm¶ Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×1 0⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm T÷hickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the support of maj©or achievement transformation projects in Jiangsu Province and talent projects at alσl levels in Suzhou City, after 10 years of research and development, we have completed the complet e process development from the independent research and☆ development of material growth equipment to the growth and preparation of GaN single crystal suαbstrate, and the dislocation density of 2-inch GaN single crystal substrate has been reduc÷ed to 10⁴cm², reaching the world advanced level. In the past tw♥o years, we have completed the key technology development of 4-inch and 6-inch GaN si£ngle crystal substrates. At present, GaN single crystal substrate product♦s have been provided to more than 500 customers, basically completed the occupatio☆n of the R & D market, is to enhance the production capacity to the enterprise app©lication market development, the key breakthrough direction is blue-green semic§onductor laser, high-power power electronic devices, high reliab¥ility and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal subs♥trate, the key material of the third generation semiconductor. Now we$ are one of the few domestic and international units that can provide 2-inch GaN si←ngle crystal products in batch; the comprehensive performance index of GaN products is ©leading in the world, and in the next three years, we will focus on transforming •our technological first-mover advantage into global market advaδntage.

Ltd. was established in 2007, focusing on the growth of high quality GaN sem§iconductor single crystal materials. Gallium Nitride is the representa♣tive of the third generation semiconductor, it is the core basic material for energy-±saving lighting, laser projection display, smart grid, new e↓nergy vehicles, 5G communication and other industries, and is expected to form a trillion dollar ma↔rket in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation seΩmiconductor, it is the core basic material for energy-saving lighting, laser projection di£splay, smart grid, new energy vehicles, 5G communication aγnd other industries, and it is expected to form a trillion dollar market scal±e by the future...

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