GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650≤ ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(3φ00k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 ‌μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm T≥hickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*c✘m

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistiviπty(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity← (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, wit₽h the support of major achievement transformation projects in Jiangsu Province and talent projects at all levels in Suzhou City, after 10 years of research and dφevelopment, we have completed the complete process development ≈from the independent research and development of material growth equipment to the gro®wth and preparation of GaN single crystal substrate, and the✔ dislocation density of 2-inch GaN single crystal substrate hasα been reduced to 10⁴cm², reaching the world advanced level. In the p±ast two years, we have completed the key technology development of 4-inch and 6-in₩ch GaN single crystal substrates. At present, GaN single crystal substrate products ha×ve been provided to more than 500 customers, basically completed the occupatδion of the R & D market, is to enhance the prodΩuction capacity to the enterprise application market development, the key breakthrough directioεn is blue-green semiconductor laser, high-power power electro≠nic devices, high reliability and high-power microwave deλvices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of€ GaN single crystal substrate, the key material of the third generation semiconduc tor. Now we are one of the few domestic and international units that can provide 2-inch♦ GaN single crystal products in batch; the comprehensive performance index of GaN products is lea÷ding in the world, and in the next three years, we will focus on transforming our technological fi rst-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semico"nductor single crystal materials. Gallium Nitride is the representativσe of the third generation semiconductor, it is the core basic m aterial for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G >communication and other industries, and is expected to form a ☆trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconλductor, it is the core basic material for energy-saving lighting, laser projection display, smart g∑rid, new energy vehicles, 5G communication and other industries, and it is e∑xpected to form a trillion dollar market scale by the future...Ω

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