GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < ¶0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1 ×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistiv₹ity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50π μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1✔×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 "μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technolog₹y Co., Ltd, with the support of major achievement transformation project$s in Jiangsu Province and talent projects at all levels in Su±zhou City, after 10 years of research and development, we have completed the complete σprocess development from the independent research and development of mat erial growth equipment to the growth and preparation of GaN single crystal substrate, and the di←slocation density of 2-inch GaN single crystal subs✘trate has been reduced to 10⁴cm², reaching the world advanced level. In the past two years, we€ have completed the key technology development of 4-inch an×d 6-inch GaN single crystal substrates. At present, GaN single crystal substrate products have &been provided to more than 500 customers, basically completed> the occupation of the R & D market, is to enhance the production capacity to the enterpris&e application market development, the key breakthrough direction is™ blue-green semiconductor laser, high-power power electronic d¶evices, high reliability and high-power microwave devices and other ma€jor areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crysta★l substrate, the key material of the third generation semiconductor‌. Now we are one of the few domestic and internationa∏l units that can provide 2-inch GaN single crystal pr•oducts in batch; the comprehensive performance index of≠ GaN products is leading in the world, and in the next three years, we will fo♠cus on transforming our technological first-mover ↓advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of hi"gh quality GaN semiconductor single crystal materials. Gallium Nitride is the representative≠ of the third generation semiconductor, it is the core b₩asic material for energy-saving lighting, laser projection display, smart grid, new energ y vehicles, 5G communication and other industries, and is expected to form± a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, i€t is the core basic material for energy-saving lighti£ng, laser projection display, smart grid, new energy vehicles, 5G communi§cation and other industries, and it is expected to form a trillion dollar market scale by the futur¥e...

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