GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 βΩ*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm R♥esistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k♥): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μδm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1 ×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resist₽ivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the supp☆ort of major achievement transformation projects in Jiangsu Province and talent projects at a☆ll levels in Suzhou City, after 10 years of research and development, we have completed the complet∏e process development from the independent research and development of material growth equipm★ent to the growth and preparation of GaN single crystal ₩substrate, and the dislocation density of 2-inch GaN single crystal substrate has been r$educed to 10⁴cm², reaching the world advanced level. In the past t¶wo years, we have completed the key technology development of 4-iδnch and 6-inch GaN single crystal substrates. At presen↔t, GaN single crystal substrate products have been provi¥ded to more than 500 customers, basically completed >the occupation of the R & D market, is to enhan♠ce the production capacity to the enterprise application market development, the key breakthroug‍h direction is blue-green semiconductor laser, high-powe r power electronic devices, high reliability and high-power microwave devices and o☆ther major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal substrate", the key material of the third generation semiconductor. Now we are one of the few domestic and international units that can provide 2-εinch GaN single crystal products in batch; the comprehensiλve performance index of GaN products is leading in the world, and in the next three yearλs, we will focus on transforming our technological first-mover advanta±ge into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor sin↕gle crystal materials. Gallium Nitride is the representative of the third generation semiconductorσ, it is the core basic material for energy-saving lighting, lase'r projection display, smart grid, new energy vehicles, 5G communication a¥nd other industries, and is expected to form a trillion dollar markeγt in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, ‍it is the core basic material for energy-saving lighting, lase↑r projection display, smart grid, new energy vehicles, 5G communication and≈ other industries, and it is expected to form a trillion dollar market sc±ale by the future...

Learn more