GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (30φ0k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm R≠esistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.€5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resisγtivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resis✔tivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0 .5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the sαupport of major achievement transformation projects in Jiangsu Province and ta←lent projects at all levels in Suzhou City, after 10β years of research and development, we have completed the complete process developme™nt from the independent research and development of material grow th equipment to the growth and preparation of GaN single crystal substrate×, and the dislocation density of 2-inch GaN single crystal sub∏strate has been reduced to 10⁴cm², reaching the world advanced level. In the past two≥ years, we have completed the key technology development of 4-inch ¶and 6-inch GaN single crystal substrates. At present, GaN single crystal substra÷te products have been provided to more than 500 customers, basically completed the occupation of th★e R & D market, is to enhance the production capacity to the enterpri♦se application market development, the key breakthrough directioδn is blue-green semiconductor laser, high-power power electronic <devices, high reliability and high-power microwave devices aεnd other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crystal substrate, the keyσ material of the third generation semiconductor. Now we a re one of the few domestic and international units that can provide 2-inch GaN single crystal prod↕ucts in batch; the comprehensive performance index of GaN products is leading in the world, and in ←the next three years, we will focus on transforming our technological first-mover adva×ntage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality γGaN semiconductor single crystal materials. Gallium Nitride is the rep∏resentative of the third generation semiconductor, it is the co₹re basic material for energy-saving lighting, laser projection display, smart grid, new ene≥rgy vehicles, 5G communication and other industries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconduct←or, it is the core basic material for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G communication and other industries, and it is expected to form a trillion dollar market scale by the future...

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