GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resi₩stivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×¶10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thick↔ness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): €< 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): ↑>1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): ✘< 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Techn∞ology Co., Ltd, with the support of major achievement transf™ormation projects in Jiangsu Province and talent projects at all levels in Suzhou πCity, after 10 years of research and development, we have completed the complete process dev☆elopment from the independent research and development of material growth equipment t±o the growth and preparation of GaN single crystal substrate, and the dislocation density∞ of 2-inch GaN single crystal substrate has been reduced to 10⁴cm², reacφhing the world advanced level. In the past two years, we have completed the key tec‍hnology development of 4-inch and 6-inch GaN single crystal substrates. At present, GaN single cry stal substrate products have been provided to more than 500 customers, basically completed the o€ccupation of the R & D market, is to enhance theΩ production capacity to the enterprise application market™ development, the key breakthrough direction is blue-green semiconductor laser,σ high-power power electronic devices, high reliability and high-power microwave devices and otheφr major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrializat♠ion of GaN single crystal substrate, the key material of the third generation← semiconductor. Now we are one of the few domestic and international u♥nits that can provide 2-inch GaN single crystal products in batch; the comprehensive pe↕rformance index of GaN products is leading in the world, and in the next three yea₹rs, we will focus on transforming our technological first-mover advanta ge into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN semiconductor singl↓e crystal materials. Gallium Nitride is the representative of the third gener₹ation semiconductor, it is the core basic material for energy-saving lighting, laser projec∑tion display, smart grid, new energy vehicles, 5G communication and other industries, and is exp ected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation sem iconductor, it is the core basic material for energy-saving lighting, laser p‍rojection display, smart grid, new energy vehicles, 5G communication and other industries, and it→ is expected to form a trillion dollar market scale by the future...

Learn more