GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：6σ50 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thi↕ckness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ±" 25 μm Resistivity (300k): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thicknes∑s：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm αResistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thic kness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd, with the ✔support of major achievement transformation projects in Jiang×su Province and talent projects at all levels in Suzhou City, ±after 10 years of research and development, we have comple™ted the complete process development from the independent research and deεvelopment of material growth equipment to the growth and preparation of GaN single c<rystal substrate, and the dislocation density of 2-in∏ch GaN single crystal substrate has been reduced to 10⁴ cm², reaching the world advanced level. In the past ₩two years, we have completed the key technology development of 4-inch and 6-inch ↔GaN single crystal substrates. At present, GaN single crystal substrate products have ÷been provided to more than 500 customers, basically completed ✔the occupation of the R & D market, is to enhance the product÷ion capacity to the enterprise application market devel₽opment, the key breakthrough direction is blue-green semiconductor laser, high-power power≥ electronic devices, high reliability and high-power microwav e devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN sing§le crystal substrate, the key material of the third generation semiconductor. Now we ar‌e one of the few domestic and international units that can p₩rovide 2-inch GaN single crystal products in batch; the comprehensive performance index of GaN pro↔ducts is leading in the world, and in the next three years, we will focus on tran&sforming our technological first-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality GaN sem♦iconductor single crystal materials. Gallium Nitride is the representative φof the third generation semiconductor, it is the core basic material for energy-saving lighting, laser projection display, smart griβd, new energy vehicles, 5G communication and other in dustries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation δsemiconductor, it is the core basic material for energy-saving lighting, laser projection→ display, smart grid, new energy vehicles, 5G communication and other industries, and it is e↓xpected to form a trillion dollar market scale by the future...

Learn more