GaN Single Crystal Substrate For High Power Device∞s

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity ☆(300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420$ ±50μm Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0¶.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm T'hickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μ>m Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resiβstivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology Co., Ltd," with the support of major achievement transformation projects in Jiangsu Province₩ and talent projects at all levels in Suzhou City, after 10 years of research and developm©ent, we have completed the complete process development from the i•ndependent research and development of material growth equipment to th‍e growth and preparation of GaN single crystal substrate, and &the dislocation density of 2-inch GaN single crystal substrate has been redu↓ced to 10⁴cm², reaching the world advanced level. In t≠he past two years, we have completed the key technology development of 4-inch and 6-inch GaN single₽ crystal substrates. At present, GaN single crystal substrate products have been pr®ovided to more than 500 customers, basically completed theπ occupation of the R & D market, is to enhance the production capacity t±o the enterprise application market development, the key breakthrough directi on is blue-green semiconductor laser, high-power power electφronic devices, high reliability and high-power microwave devices and other major areas.&n€bsp;

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Professional supplier of high quality GaN substrates↑

Ltd. is dedicated to the R&D and industrialization of GaN single crystal substrate, the k₩ey material of the third generation semiconductor. Now we ↑are one of the few domestic and international units that can pr↓ovide 2-inch GaN single crystal products in batch; the comprehe∑nsive performance index of GaN products is leading in the w"orld, and in the next three years, we will focus on transforming our technological first-±mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quality Ga→N semiconductor single crystal materials. Gallium Niγtride is the representative of the third generation semiconductor, it is the core basic mate¶rial for energy-saving lighting, laser projection display, smart grid, new energy vehicles, 5G comm§unication and other industries, and is expected to form a trillion dollar market in ≥the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it →is the core basic material for energy-saving lighting, laser projection d↑isplay, smart grid, new energy vehicles, 5G communicatiγon and other industries, and it is expected to form a trillion dollar market scale by th e future...

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