GaN Single Crystal Substrate For High Power Devices

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4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickn→ess：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μ≥m Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k ): < 0.5 Ω*cm

4" self-supporting GaN wafers (non-doped)

Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity ♥(300k): < 0.5 Ω*cm

4-inch self-supporting GaN wafers (iron doped)

Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μ&m Resistivity(300k): >1×10⁹Ω*cm

2" self-supporting GaN wafers (non-doped)

Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resist♠ivity (300k): < 0.5 Ω*cm

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Company Introduction

Since the establishment of Suzhou Nanowin Science and Technology C↓o., Ltd, with the support of major achievement transformation projects in Jiangsu Pφrovince and talent projects at all levels in Suzhou City, after 10 years of research and φdevelopment, we have completed the complete process developm↔ent from the independent research and development of ↔material growth equipment to the growth and preparation of GaN s∏ingle crystal substrate, and the dislocation density of 2-i•nch GaN single crystal substrate has been reduced to 10⁴cm², reaching the ✔world advanced level. In the past two years, we have completed the key technology development of '4-inch and 6-inch GaN single crystal substrates. At present, GaN single crystal substrat$e products have been provided to more than 500 customers, basically completed the occup↔ation of the R & D market, is to enhance the production capacity to the enterprise app™lication market development, the key breakthrough diφrection is blue-green semiconductor laser, high-power power ele₽ctronic devices, high reliability and high-power microwave devices and other major areas.

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Professional supplier of high quality GaN substrates

Ltd. is dedicated to the R&D and industrialization of GaN single crysβtal substrate, the key material of the third generation semiconductor. Now we are one of the •few domestic and international units that can provide 2-inch GaN single crystal produ→cts in batch; the comprehensive performance index of GaN pr$oducts is leading in the world, and in the next three years, we will focus on transfαorming our technological first-mover advantage into global market advantage.

Ltd. was established in 2007, focusing on the growth of high quali'ty GaN semiconductor single crystal materials. Gallium Nitαride is the representative of the third generation semiconductor, it is the core basic material for♠ energy-saving lighting, laser projection display, smart g✔rid, new energy vehicles, 5G communication and other indu↓stries, and is expected to form a trillion dollar market in the future.

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2007Year
Established

500+
Clients Served

60+
Core Patents

50+
Invitation to Report

10billion+
Total Investment

Applications

Gallium Nitride is the representative of the third generation semiconductor, it is t∑he core basic material for energy-saving lighting, laser projection™ display, smart grid, new energy vehicles, 5G communication and other ©industries, and it is expected to form a trillion dollar market scale by th•e future...

Learn more