Dr. Xu Ke, Chairman of Suzhou Nanowin and a researcher of Suzhou Nano Institute (SNI♦), was awarded the 2013 National Outstanding Young Scientists Fund (NYSF) project, which is↑ the first recipient of NYSF nurtured by SNI. 

The National Outstanding Young Scientists Fund was approved by th e State Council on 14 March 1994 and is administered by the Naλtional Natural Science Foundation of China (NSFC). It aims to support outstandiσng young scholars under the age of 45 to conduct basic research in natural sciences in Mainlaφnd China, to promote the growth of young scientific and technological talents, t↕o encourage overseas scholars to return to work in China, and to cultivate a group of outβstanding academic leaders who will enter the frontiers of science and technology€ in the world. 
　　Dr. Xu Ke has been working on GaN materials and devices for a long time≈, and has done systematic and in-depth research on MOCVD growth, MBE growth and HVPE gro®wth of nitride materials, especially in the areas of noπn-polar surface GaN growth, the effect of crystal polarity on nφitride growth, and HVPE growth of GaN single crystal substrate' materials. In the past ten years, Dr. Xu Ke and hΩis team have started from the development of HVPE gro‍wth equipment and high spatial resolution integrated optoelectronic test system.  On the basis of in-depth research on the HVPE growth physics of GaN, they have successfully devel∞oped high quality 2-inch GaN substrates with dislocation density as low as 104cm-2 εorders of magnitude; through doping compensation, they have successfully developed 2-inch ↑semi-insulated GaN, which has filled the gap in China. With© the support of the Science and Technology Leading Talents Program and vent♦ure capital funds, Suzhou Nanowin, the industrialization company of this ac₽hievement, has achieved the batch preparation of GaN substrates with controlled electr₽ical performance and low defect density of greater than 2 inches, and the mass product÷ion of high quality GaN single crystal substrates is important for China to carry Ωout the development of high-end optoelectronic devices based on GaN. The mass produ ction of high quality GaN single crystal substrates is of strβategic importance to the development of high-end GaN-based optoelectronic de₩vices and microwave power devices in China.